Innovation Breakthrough | Fenghua Semiconductor, a Subsidiary of NATIONSTAR, Successfully Develops Fan-out D-mode GaN Half-bridge Modules

In the third-generation semiconductor sector, GaN power devices boast outstanding advantages in efficiency, frequency, size and other comprehensive aspects. They have taken the lead in mass production in consumer electronics markets such as fast charging, and their penetration rate continues to rise driven by the layout of major smartphone manufacturers at home and abroad.

Recently, Fenghua Semiconductor, a subsidiary of NATIONSTAR, has successfully developed a D-mode GaN half-bridge module based on fan-out panel-level packaging.

▲The fan-out D-mode GaN half-bridge module measures only 6×7×0.45 mm

This module achieves a new breakthrough in packaging form. Compared with traditional wire-bonded frame packaging, the module volume is reduced by more than 67%, and the PCB layout area is lowered by 30%, resulting in a more compact overall packaging structure and superior product performance. It can further drive GaN products toward miniaturization, thinning, and high efficiency, providing optimized technical solutions for consumer electronics applications such as fast charging.

Technological Innovation

Forging New Competitive Advantages

The D-mode GaN half-bridge module launched by Fenghua Semiconductor better meets the increasingly demanding requirements for integration and miniaturization in consumer electronics applications.

The module innovatively adopts the self-developed fan-out panel-level packaging. It realizes the bump structure of GaN HEMT and Si MOS chips through copper ball bonding, and achieves interconnection via the copper plating process of the redistribution layer (RDL). This enables effective interconnection of four power transistors and forms a half-bridge topology, realizing high-density integration of the module’s internal structure, reducing product volume, enhancing performance advantages, and strengthening market competitiveness.

▲Schematic Diagram of Fan-out Panel-level Packaging Wiring Structure for D-mode GaN Half-bridge Module

Anchoring "Three Advantages"

Empowering Products with Quality and Efficiency

Based on fan-out panel-level packaging, the D-mode GaN half-bridge module achieves the "Three Advantages" goal:

▌Superior Performance

Fan-out panel-level packaging enables more complex electrical interconnections in a smaller space with shorter interconnecting lines, resulting in a more compact internal structure. This reduces volume by over 67% and layout size by 30%.In addition, the module features lower parasitic inductance and resistance, fully unleashing the high-frequency and high-efficiency characteristics of GaN materials and boosting overall performance.

▲The module reduces layout size by 30% compared with conventional discrete packaging products

To verify its superior performance, Fenghua Semiconductor applied the fan-out panel-level packaged GaN half-bridge module to a 100W switching power supply. The power supply measures 60×50×27 mm with significantly reduced volume, and its peak efficiency reaches up to 95%.

▲The module is applied to a 100W switching power supply to verify product volume and performance

In terms of thermal management, after aging the power supply in a sealed space at an ambient temperature of 25℃ for 1 hour, the maximum temperature at the module position is 78.9℃, and the maximum temperature of the entire switching power supply is 86.4℃. The module features low heat generation and fast heat dissipation.

▌Higher Reliability

Compared with conventional discrete packaging products, the module achieves a 17.59% increase in turn-on speed and a 10.7% reduction in turn-on loss. The significant decrease in switching loss helps further reduce thermal stress, improve power efficiency and power density, optimize switching performance, and comprehensively enhance reliability.

▲Module Dynamic Characteristic Test & Results

Better Overall Cost

In terms of raw materials, the module does not require a copper substrate, helping lower packaging costs for mass production. Meanwhile, improved performance efficiency and reduced heat dissipation requirements allow for smaller structural components and less heat dissipation material, cutting thermal design costs of the control system.

In addition, the module is compatible with Si MOSFET gate drivers and features simple driving. It retains the optimal performance of GaN materials while offering the highest gate reliability of silicon MOSFETs, providing customers with high-performance, highly reliable and cost-effective solutions.

▲The module features simple driving and is adaptable to a wide range of application scenarios

Layout Optimizing

Accelerating the Development of New Quality Productive Forces

Fenghua Semiconductor is a key platform for NATIONSTAR to deploy in the compound semiconductor packaging and testing field. It specializes in the R&D, production, packaging, testing and sales of semiconductor discrete devices and integrated circuits.

Since the beginning of this year, NATIONSTAR has actively optimized the layout of its third-generation semiconductor business. By integrating resources with the semiconductor packaging and testing business of its subsidiary Fenghua Semiconductor, the company has formed a new development pattern featuring business synergy, resource sharing and complementary advantages, accelerating the cultivation and development of new quality productive forces.

▲Fenghua Semiconductor Dispensing & Die Bonding Workshop

At present, Fenghua Semiconductor possesses more than 20 internationally advanced automated semiconductor packaging and testing production lines.It can produce over 20 packaging series including TO, SOT, SOD, SOP, TSSOP, QFN, DFN and others, with a total product portfolio of more than 1,000 items.

This enables it to meet the diversified application demands of the third-generation semiconductor and advanced packaging & testing market, injecting continuous impetus into the accelerated domestic substitution of China’s semiconductor industry.