Crafting High-Reliability Quality with Precision, NATIONSTAR Improves Its Third-Generation Semiconductor Power Product Portfolio

Thanks to their superior inherent properties, third-generation semiconductors are accelerating technological advancements and market penetration in power devices and modules, supported by the booming development of smart electronics, new energy vehicles, photovoltaics and other application sectors. Taking automotive silicon carbide (SiC) power devices as an example, an increasing number of automakers are adopting SiC in their electric drive systems. According to TrendForce, the market size of automotive SiC power devices reached $1.07 billion in 2022 and is projected to climb to $3.94 billion by 2026.

Aiming at cutting-edge technologies and seizing industry leadership, NATIONSTAR leverages its industrial experience and technological innovation advantages to meticulously develop highly reliable third-generation semiconductor power devices and modules. Recently, at the 2022 TrendForce Third-Generation Semiconductor Frontier Trend Symposium, the R&D Institute of NATIONSTAR delivered a detailed presentation on its thermal management research achievements and exploration in the third-generation semiconductor market, attracting extensive attention from the industry and the public.

Strengthening Thermal Simulation, Pursuing Excellence in Reliability

Over 80% of power electronic component failures stem fundamentally from thermal issues. Thermal management plays a critical role in analyzing heat sources, dissipation paths and heat transfer mechanisms. Currently, most thermal management methods in the industry still rely on traditional verification approaches.

NATIONSTAR has proactively adopted digital tools, using iterative digital verification for thermal management to establish models and validate simulations. By conducting data-driven and virtual R&D in the product design phase, the company comprehensively optimizes module design while ensuring packaging reliability, successfully breaking away from the conventional “trial-and-error” research model.

For instance, NATIONSTAR has conducted in-depth research on the refined design of wire bonding processes. By studying the effects of different stresses on bonding wires under varying thermal conductivity and temperature rise conditions, the company determines the optimal wire bonding method and establishes corresponding process requirements and standards.

At present, NATIONSTAR has successfully applied the digital iterative verification method for thermal management to key processes including thermal analysis of chip layout, optimization of eutectic welding voids, and PDCA verification for new product development.

This approach enables rapid hotspot localization, early detection of potential reliability failures, lower cost for design adjustments, and higher R&D efficiency. It also provides multidisciplinary guidance for engineers to further optimize product design.

▲SiC MOSFETProduct Reliability Verification Status

Strengthening Application Orientation, Innovating Solution Design

Third-generation semiconductors represent one of NATIONSTAR’s key forward-looking strategic focuses. In recent years, the company has actively expanded into the third-generation semiconductor sector to strengthen and complement its industrial chain in the semiconductor field. Recently, NATIONSTAR plans to acquire Fenghua Core Electric, a company specializing in the R&D, production, and sales of discrete semiconductor devices and integrated circuits, to enhance its competitiveness and consolidate its leading edge.

Meanwhile, through sustained technological innovation and R&D efforts, the company has successfully launched three major product lines in the third-generation semiconductor sector, providing the market with high-quality, highly reliable, and diversified semiconductor packaging and testing services.

SiC Power Discrete Devices

NATIONSTAR’s SiC power discrete devices include two flagship product lines: SiC-MOSFET and SiC-SBD, available in five package types:TO-247, TO-220, TO-263, TO-252, and DFN5×6.

These products are widely used in industrial applications such as photovoltaic inverters, energy storage systems, charging piles, high-power drives, and UPS systems, and are being developed to meet automotive-grade standards.

Notably, to improve the reliability of SiC power discrete devices, NATIONSTAR has intensified research in thermo-compression bonding process void control, IOL stress reliability, high power density, and thermal insulation, further upgrading product performance.

SiC Power Modules

NATIONSTAR’s SiC power module products are benchmarked against industry leaders.At present, the company has planned four types of mass-producible standard package series: 34mm, 62mm, EASY, and Econo series.

These modules are widely used in solar power generation, new energy vehicles, new energy EMUs, power grid transmission, wind power generation and other fields.

GaN Devices

NATIONSTAR’s GaN devices mainly target the lighting and high-power drive markets.The company has established two major product lines in DFN5×6 and DFN8×8 packages, launching the E-mode series (650V/12A, 650V/17A) and the cascode series (650V/13A, 650V/23A), fully prepared to meet market demand.

Going forward, NATIONSTAR will target the market, seize opportunities, and vigorously implement an innovation-driven development strategy.

By fully leveraging its strengths and deeply engaging in third-generation semiconductors, the company will accelerate R&D on core and key technologies, empowering its high-quality development through scientific and technological innovation.