New Release of Third-Generation Semiconductor Products!NATIONSTAR NS62m Power Module Now Available

Recently, the Research Institute of NATIONSTAR has launched the brand-new NS62m SiC MOSFET Power Module based on wide-bandgap silicon carbide (SiC) semiconductor technology.It can be applied in traditional industrial control, energy storage inverters, UPS, charging piles, rail transit and other power conversion fields.

01 Energy Transition, Energy Storage Enters a Period of Rapid Growth

Against the backdrop of the "dual carbon" goals, China's power system is transitioning to a new-type power system dominated by new energy sources.

As a flexible regulating power source, energy storage plays a critical role in this new system.The energy storage inverter, a key component of the energy storage system, controls the charging and discharging of battery packs, and is vital to improving system efficiency and reducing costs.

For the energy storage inverter market, NATIONSTAR's new NS62m power module leverages the outstanding performance of SiC MOSFET chips to increase current density and switching frequency, reduce switching and conduction losses, cut the use of passive components and shrink cooling systems.This ultimately lowers overall system cost and boosts system efficiency.

02 Four Core Advantages of the NS62m

Excellent Flexibility & Compatibility

The NATIONSTAR NS62m power module adopts standard packaging and a half-bridge topology with a built-in NTC thermistor for real-time temperature monitoring. It uses a 62mm standard substrate and interface, making it compatible with most mainstream products in the industry and enabling quick replacement.With a continuous operating junction temperature (Tvjop) of 150°C and strong thermal cycling performance, the module delivers exceptional reliability.

Full-Bridge Topology with Parallel Capability

The NS62m power module is applied in inverters in a half-bridge circuit configuration.In practical use, two or three NS62m modules are typically connected in parallel to form a single-phase full-bridge or three-phase bridge topology, converting DC power into adjustable-frequency, adjustable-amplitude AC power to achieve inversion.

Thanks to the excellent switching performance and reverse recovery characteristics of the integrated body diode within the SiC MOSFET, the NS62m can meet freewheeling requirements in most applications without additional external diodes.

As shown in the orange blocks in the diagram, each block represents one NS62m power module. The diagram illustrates a single-phase full-bridge topology formed by two NS62m power modules in parallel.

Performance Comparison Speaks for Itself

The NS62m power module operates at higher switching frequency and lower switching loss,while helping improve converter system efficiency and reduce the cost of heat dissipation structures.

According to experimental data, compared with equivalent current-rated products on the market, the NS62m power module features:

· Turn-on delay reduced by 79 ns

· Rise time reduced by 42 ns

· Turn-off delay reduced by 468 ns

Turn-on loss is lowered by 82%, turn-off loss by 92%, delivering outstanding overall switching loss performance.

Diverse Product Range for Customized Needs

To meet demands in traditional industrial control, energy storage inverters, charging piles and other fields, NATIONSTAR offers a rich lineup of NS62m SiC MOSFET module models.

Backed by its advanced third-generation semiconductor device production line, the company supports customized development of SiC power modules with different packages and specifications, providing customers with high-quality tailored products and services.

Currently, NATIONSTAR is accelerating its in-depth layout in the third-generation semiconductor sector. Driven by independent innovation, the company is striving to overcome key technical challenges, speed up the transformation of scientific and technological achievements, and promote product iteration. In doing so, it injects sustained new vitality into the high-quality industrial development of third-generation semiconductors.